byw172d / 172f / 172g document number 86096 rev. 1.2, 13-apr-05 vishay semiconductors www.vishay.com 1 949588 fast avalanche sinterglass diode features ? glass passivated junction hermetically sealed package soft recovery characteristics low reverse current low forward voltage drop high pulse cu rrent capability lead (pb)-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications fast rectification diode in s.m.p.s mechanical data case: sod-64 sintered glass case terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: approx. 858 mg parts table absolute maximum ratings t amb = 25 c, unless otherwise specified maximum thermal resistance t amb = 25 c, unless otherwise specified part type differentiation package byw172d v r = 200 v; i fav = 3 a sod-64 byw172f v r = 300 v; i fav = 3 a sod-64 byw172g v r = 400 v; i fav = 3 a sod-64 parameter test condition part symbol value unit reverse voltage = repetitive peak reverse voltage see electrical characteristics byw172d v r = v rrm 200 v byw172f v r = v rrm 300 v byw172g v r = v rrm 400 v peak forward surge current t p = 10 ms, single half sine wave i fsm 100 a average forward current i fav 3a junction and storage temperature range t j = t stg - 55 to + 175 c non repetitive reverse avalanche energy i (br)r = 1 a e r 20 mj parameter test condition symbol value unit junction ambient l = 10 mm, t l = constant r thja 25 k/w on pc board with spacing 25 mm r thja 70 k/w e2
www.vishay.com 2 document number 86096 rev. 1.2, 13-apr-05 byw172d / 172f / 172g vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified typical characteri stics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit forward voltage i f = 3 a v f 1.1 v i f = 9 a v f 1.5 v reverse current v r = v rrm i r 1 a v r = v rrm , t j = 100 c i r 20 a reverse recovery time i f = 0.5 a, i r = 1 a , i r = 0.25 a t rr 75 100 ns figure 1. max. thermal resistance vs. lead length figure 2. forward current vs. forward voltage 0 10 20 30 40 94 9466 ll t l = constant r - therm. resist. junction/ambient (k/w) thja 0 l - lead length ( mm ) 51015 25 30 20 i - forward curren t(a) 0.001 0.01 0.1 1 10 100 0 0.5 1.0 1.5 2.0 2.5 v f - forward voltag e(v) 16387 f t j =25 c t j = 175 c figure 3. max. average forward current vs. ambient temperature figure 4. reverse current vs. junction temperature 16388 i - average forward current ( a ) fav 0 20 40 60 80 100 120 140 160 180 t amb - ambient temperature ( c) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 v r =v rrm half sinewave r thja = 25 k/w l=10mm r thja = 70 k/w pcb:d=25mm 1 10 100 1000 25 50 75 100 125 150 175 t j - junction temperature ( c) 16389 v r =v rrm i - reverse current ( a) r
byw172d / 172f / 172g document number 86096 rev. 1.2, 13-apr-05 vishay semiconductors www.vishay.com 3 package dimensions in mm (inches) figure 5. max. reverse power dissipation vs. junction temperature 0 20 40 60 80 100 120 140 160 180 25 50 75 100 125 150 175 t j - junction temperature ( c) 16390 v r =v rrm p - reverse power dissipation ( mw ) r p r -limit @100 % v r p r -limit @80%v r figure 6. diode capacitance vs. reverse voltage 0 20 40 60 80 100 120 0.1 1 10 100 v r - reverse voltag e(v) 16391 c - diode capacitance ( pf ) d f=1mhz figure 7. thermal response 1 10 100 1000 z - thermal resistance f. pulse cond. (k/ w thp t p - pulse length ( s ) 94 9562 i frm - repetitive peak forward current ( a ) 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 2 10 0 10 1 t p /t= 0.05 v rrm = 600 v r thja =70k/w t p /t= 0.5 t p /t= 0.2 t p /t= 0.1 0.02 t p /t= 0.01 t amb =25 c 45 c 70 c 100 c cathode identification 4.3 (0.168) max. 1.35 (0.053) max. 4.0 (0.156) max. sintered glass case sod-64 94 9587 26(1.014) min. 26 (1.014) min. iso method e
www.vishay.com 4 document number 86096 rev. 1.2, 13-apr-05 byw172d / 172f / 172g vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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